Monolayer graphene film

Descrição detalhada : Growth Method: CVD synthesisTransfer Method: Clean transfer methodQuality Control: Optical Microscopy & Raman checkedSize: 1 cm x 1 cmAppearance (Color): TransparentTransparency: >97%Appearance (Form): FilmCoverage: >95%Number of graphene layers: 1Thickness (theoretical): 0.345 nmFET Electron Mobility on Al2O3: 2; 000 cm2/V·sFET Electron Mobility on SiO2/Si (expected): 4; 000 cm2/V·sSheet Resistance: 600 Ohms/sq.Grain size: Up to 10 mumSubstrate QuartzSize: 1.25 cm x 1.25 cmFlatness: bow: 20mum; warp: 30mumRoughness:6 angstroms (on the polished side)Surface: Double side polished, Graphene is a unique one atom thick, two dimensional allotrope of carbon. Among all the synthesis technique, chemical vapor deposition of graphene on various substrates is the most promising route for the large scale production of good quality graphene. Graphene deposited on dielectric surface may exhibit better performance in graphene based FETs. Graphene deposited on quartz may be deposited by direct chemical vapor deposition via a sacrificial copper film.
Armazenamento : Room Temperature
Embalagem : 1X4EA