Graphene FET chip

Descrição detalhada : Device configuration:This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry. The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties., Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 ?S and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.
Sinónimos : Graphene FET; Graphene FET sensor; Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry
Armazenamento : Room Temperature
Embalagem : 1X1EA